Characterization of GaAs/AlxGa1-xAs heterointerface defects by means of capacitive measurememts |
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| Authors: | EP Valcheva |
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| Institution: | (1) Sofia University, Department of Solid State Physics and Microelectronics, 5 J. Bourchier Blvd, 1126 Sofia, Bulgaria (E-mail: epv@phys.uni-sofia.bg), BG |
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| Abstract: | x Ga1-xAs heterojunctions grown by liquid-phase epitaxy. Interface states with hiqh concentration, Nt=3×1011 cm-2 and energy level Ec-Et=0.14 eV distributed in a box 150 Å wide at the heterointerface and acting as electron traps are observed. The possible origin
could be the isolated arsenic vacancy VAs in n-GaAs.
Received: 25 April 1996/Accepted: 22 January 1997 |
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| Keywords: | PACS: 61 70 73 40 |
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