Evolution of the 7/2 fractional quantum Hall state in two-subband systems |
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| Authors: | Liu Yang Shabani J Kamburov D Shayegan M Pfeiffer L N West K W Baldwin K W |
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| Institution: | Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA. |
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| Abstract: | We report the evolution of the fractional quantum Hall state (FQHS) at a total Landau level (LL) filling factor of ν=7/2 in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a function of density, magnetic field tilt angle, or symmetry of the charge distribution. At intermediate tilt angles, for example, we observe a strengthening of the ν=7/2 FQHS. Moreover, in a well with asymmetric change distribution, there is a developing FQHS when the LL filling factor of the symmetric subband ν(S) equals 5/2 while the antisymmetric subband has a filling factor of 1<ν(A)<2. |
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