Dielectric breakdown and avalanches at nonequilibrium metal-insulator transitions |
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Authors: | Shekhawat Ashivni Papanikolaou Stefanos Zapperi Stefano Sethna James P |
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Affiliation: | LASSP, Physics Department, Cornell University, Ithaca, New York 14853-2501, USA. |
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Abstract: | Motivated by recent experiments on the finite temperature Mott transition in VO(2) films, we propose a classical coarse-grained dielectric breakdown model where each degree of freedom represents a nanograin which transitions from insulator to metal with increasing temperature and voltage at random thresholds due to quenched disorder. We describe the properties of the resulting nonequilibrium metal-insulator transition and explain the universal characteristics of the resistance jump distribution. We predict that by tuning voltage, another critical point is approached, which separates a phase of boltlike avalanches from percolationlike ones. |
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