| 一种适用于VLSI MOS器件的阈电压模型 |
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| 引用本文： | 何野,魏同立. 一种适用于VLSI MOS器件的阈电压模型[J]. 固体电子学研究与进展, 1987, 0(1) |
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| 作者姓名： | 何野 魏同立 |
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| 作者单位： | 南京工学院(何野)，南京工学院(魏同立) |
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| 摘 要： | 本文从等效浓度的观点出发,提出了一种适用于VLSI MOS器件的阈电压模型,数值结果与二维模拟基本一致。叙述了确定实际阈电压的步骤,可作为器件工艺监控的简便方法。
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A Threshold Voltage Model for VLSI MOS Devices |
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| Abstract: | From the point view of an equivalent doping density, a threshold voltage model for VLSI MOS devices is proposed. The numerical results show a reasonable agreement with two-dimensional simulation. The procedures for determining the actural threshold voltage are presented, which can be used as a simple way to control device technology. |
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