Plasma chemical vapor deposition of TiN |
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| Authors: | Shizhi Li Wu Huang Hongshun Yang Zhongshu Wang |
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| Institution: | (1) Department of Mechanical Engineering, Qingdoa, Shandong Institute of Chemical Engineering, Qingdao, China |
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| Abstract: | Experiments indicate that the temperature in chemical vapor deposition (CVD) of TiN can be decreased from about 1000°C in
conventional CVD to about 500°C by the application of a D.C. nonequilibrium plasma. The hardness of the TiN film is greater
than 2000 kg/mm2 (Vickers). The effect of pressure, ratio of gas mixture, and discharge parameters on the film deposition rate, its hardness,
and microstructures has been studied. |
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| Keywords: | Nonequilibrium plasma plasma chemical vapor deposition of TiN |
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