Photoelectric characteristics of isotype nInSb-nGaAs heterojunction with distinct or smooth interface

Spectral Characteristics of isotype nInSb-nGaAs heterojunctions (Hjs) having either distinct or smooth transition boundary are considered in the paper. Photovoltaic characteristic of the sharp-boundary Hjs reverses its sign at a certain wavelength of the incited radiation. The wavelength value depends on the applied voltage. No such phenomenon was observed in Hjs with smooth boundary, while their photo-sensitivity spectrum was significantly narrower and shifted to shorter wavelengths. The obtained results are used in design of infrared pyrometers.