| 结终端采用JTE保护技术的4H-SiC PiN二极管模拟和研制 |
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| 引用本文： | 张发生,张玉明. 结终端采用JTE保护技术的4H-SiC PiN二极管模拟和研制[J]. 计算物理, 2011, 28(2): 306-312 |
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| 作者姓名： | 张发生 张玉明 |
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| 作者单位： | 1. 中南林业科技大学计算机与信息工程学院, 湖南 长沙 410004;2. 西安电子科技大学微电子学院, 陕西 西安 710071 |
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| 基金项目： | Supported by Hunan Science and Technology Project(Grant No:2008FJ3102); Hunan Higher School Project(Grant No:08C942) |
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| 摘 要： | 利用二维器件模拟软件ISE-TCAD 10.0,对结终端采用结扩展保护技术的4H-SiC PiN二极管平面器件进行反向耐压特性的模拟,并获得许多有价值的模拟数据.依据所得的模拟数据进行此种二极管器件的研制.实验测试表明,此二极管的模拟优化数据与实验测试的结果一致性较好,4H-SiC PiN二极管所测得到的反向电压达1600 V,该反向耐压数值达到理想平面结的击穿耐压90%以上.
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| 关 键 词： | H-SiC PiN二极管 结终端扩展 仿真 工艺 击穿电压 |
| 收稿时间： | 2010-01-21 |
| 修稿时间： | 2010-04-26 |
Simulation and Fabrication of High-Voltage 4H-SiC PiN Diode with JTE |
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| ZHANG Fasheng,ZHANG Yuming. Simulation and Fabrication of High-Voltage 4H-SiC PiN Diode with JTE[J]. Chinese Journal of Computational Physics, 2011, 28(2): 306-312 |
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| Authors: | ZHANG Fasheng ZHANG Yuming |
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| Affiliation: | 1. School of Computer and Information Engineering, Central South University of Forestry and Technology, Changsha 410004, China;2. School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China |
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| Abstract: | Reverse voltage characterizations of 4H-SiC PiN diodes with junction termination extension(JTE) are simulated by using a two-dimensional device simulator(ISE-TCAD 10).0.4H-SiC PiN diodes with JTE are fabricated with a planar fabrication process based on simulation.Good consistency between simulation and experiments was achieved.It shows that a 4H-SiC PiN diode with optimized JTE edge termination can reach a breakdown voltage of 1 600 V,which is more than 90 percent of ideal parallel plane junction breakdown... |
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| Keywords: | 4H-SiC PiN diode JTE simulation process breakdown voltage |
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