Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy |
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| Affiliation: | 1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi''an, 710072, PR China;2. Key Laboratory of Radiation Detection Materials and Devices of Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi''an 710072, PR China;3. Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Fudan University, Shanghai 200433, PR China;4. Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, PR China;1. Department of Chemical and Life Science Engineering, Virginia Commonwealth University, Richmond, VA, USA;2. Department of Forensic Science, Virginia Commonwealth University, Richmond, VA, USA;1. Department of Physics, Research Institute of Physics and Chemistry, Chonbuk National University, Jeonju, 561-756, Republic of Korea;2. Department of Physics, Jeju National University, Jeju, 690-756, Republic of Korea;1. School of Medicine, Shimane University, Izumo, Shimane 693-8501, Japan;2. Graduate School of Science and Technology, Hirosaki University, Hirosaki 036-8561, Japan;1. Moldova State University, A. Mateevici 60, MD-2009 Chisinau, Republic of Moldova;2. Kazan Federal University, Kremlevskaya 18, 420008 Kazan, Russia |
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| Abstract: | The influence of damage induced by 2 MeV protons on CdZnTe radiation detectors is investigated using ion beam induced charge (IBIC) microscopy. Charge collection efficiency (CCE) in irradiated region is found to be degraded above a fluence of 3.3 × 1011 p/cm2 and the energy spectrum is severely deteriorated with increasing fluence. Moreover, CCE maps obtained under the applied biases from 50 V to 400 V suggests that local radiation damage results in significant degradation of CCE uniformity, especially under low bias, i. e., 50 V and 100 V. The CCE nonuniformity induced by local radiation damage, however, can be greatly improved by increasing the detector applied bias. This bias-dependent effect of 2 MeV proton-induced radiation damage in CdZnTe detectors is attributed to the interaction of electron cloud and radiation-induced displacement defects. |
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| Keywords: | Proton Radiation damage Ion beam induced charge microscopy CdZnTe Bias dependent |
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