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Quantum Hall ferromagnetism in a two-valley strained Si quantum well
Authors:K. Lai, W. Pan, D.C. Tsui, S. Lyon, M. Mü  hlberger,F. Sch  ffler
Affiliation:aDepartment of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA;bSandia National Laboratories, Albuquerque, NM 87185, USA;cInstitut für Halbleiterphysik, Universität Linz, Linz, Austria
Abstract:Tilted field magnetotransport study was performed in a two-valley strained Si quantum well and hysteretic diagonal resistance spikes were observed near the coincidence angles. The spike around filling factor ν=3 develops into a giant feature when it moves to the high-field edge of the quantum Hall (QH) state and quenches for higher tilt angles. When the spike is most prominent, its peak resistance is temperature independent from Tnot, vert, similar20 mK up to 0.3 K, which is different from the critical behavior previously reported near the Curie temperature of the QH ferromagnet in AlAs quantum wells. Our data suggest a strong interplay between spins and valleys near the coincidence.
Keywords:Quantum Hall ferromagnetism   Valley degeneracy   Si quantum well
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