The influence of heat-dissipation and temperature fluctuations on SbSI crystallization in thin layers

Single crystal films of SbSI 5 to 100 μ in thickness have been obtained by crystallization from melts in a close spacing. The films crystallized under conditions under conditions of direct heat -dissipation and periodical fluctuations of temperature near the melting point. The phase transition in the films was revealed by means of capacity measurements at temperatures of ∼ 20 °C.