Die Lösung von Halbleiterproblemen mit der Elektronenstrahlmikrosonde

The use of electron beam X-ray microprobe testing in the chemical analysis of semiconductor materials and devices and also in the measurement of the p n junction electrical parameters is reported. Results of analyses are presented on the precipitation of impurities and on various effects of the contaminants on device parameters. It is shown that the display of p n junction structure and also the detection of failure types is possible by using the induced current mode method.