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Shallow-impurity-assisted transitions in the course of submillimeter magnetoabsorption of strained Ge/GeSi(111) quantum-well heterostructures |
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| Authors: | V Ya Aleshkin D B Veksler V I Gavrilenko I V Erofeeva A V Ikonnikov D V Kozlov O A Kuznetsov |
| Institution: | (1) Institute of Microstructure Physics, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia;(2) Physicotechnical Research Institute, Nizhni Novgorod State University, pr. Gagarina 23/5, Nizhni Novgorod, 603950, Russia |
| Abstract: | The submillimeter (f=130–1250 GHz) magnetoabsorption spectra of strained Ge/GeSi(111) multilayer heterostructures with quantum wells are investigated at T=4.2 K upon band-gap optical excitation. It is found that the magnetoabsorption spectra contain lines associated with the excitation of residual shallow acceptors. The resonance absorption observed can be initiated by optical transitions between the impurity states belonging to two pairs of Landau levels of holes in germanium quantum-well layers. |
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