| AgGa1-xInxSe2晶体的生长习性研究 |
| |
| 引用本文： | 赵国栋,朱世富,赵北君,万书权,陈宝军,何知宇,王莹,龙勇. AgGa1-xInxSe2晶体的生长习性研究[J]. 人工晶体学报, 2009, 38(2): 301-304 |
| |
| 作者姓名： | 赵国栋 朱世富 赵北君 万书权 陈宝军 何知宇 王莹 龙勇 |
| |
| 作者单位： | 四川大学材料科学系,成都,610064 |
| |
| 基金项目： | 教育部高等学校博士学科点专项科研基金 |
| |
| 摘 要： | 采用DTA对不同铟含量(x)的AgGa1-xInxSe2多晶熔化和结晶温度进行了测试.结果表明:随着x值的增加其过冷度增大.采用改进的垂直布里奇曼法和实时补温技术,对AgGa1-xInxSe2晶体生长过程中的结晶特性和生长温度场关系进行了研究,并对其结晶形态进行了观测.发现:随着晶体生长过程的进行,熔体结晶温度呈下降趋势,固-液界面发生移动;生长晶体表面存在外形规则、形状相同的半球状小孔,有取向一致的台阶反光面,小孔底部为{112}面.研究结果为大尺寸、高质量的AgGa1-xInxSe2单晶体生长奠定了基础,生长出了尺寸达20 mm×60 mm的完整AgGa1-xInxSe2单晶体.
|
| 关 键 词： | AgGa1-xInxSe2 晶体生长 布里奇曼法 生长习性 实时补温技术, |
Study on the Growth Habits of AgGa_(1-x)In_xSe_2 Crystals |
| |
| ZHAO Guo-dong,ZHU Shi-fu,ZHAO Bei-jun,WAN Shu-quan,CHEN Bao-jun,HE Zhi-yu,WANG Ying,LONG Yong. Study on the Growth Habits of AgGa_(1-x)In_xSe_2 Crystals[J]. Journal of Synthetic Crystals, 2009, 38(2): 301-304 |
| |
| Authors: | ZHAO Guo-dong ZHU Shi-fu ZHAO Bei-jun WAN Shu-quan CHEN Bao-jun HE Zhi-yu WANG Ying LONG Yong |
| |
| Affiliation: | Department of Materials Science;Sichuan University;Chengdu 610064;China |
| |
| Abstract: | Temperatures of the melting and crystallization for AgGa1-xInxSe2 with different x values were determined by using DTA. The result shows that the super cooling degrees increased as the x values increasing. And the relations between crystallization habit and temperature field of the furnace for the crystal growth were studied. It is found that solid-liquid interface of the crystal growth was removing gradually during the crystal growth process, many small hemispherical holes with regular shape appeared on th... |
| |
| Keywords: | AgGa1-xInxSe2 |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《人工晶体学报》浏览原始摘要信息 |
|
点击此处可从《人工晶体学报》下载全文 |
|
