Influence of the absorbed optical quanta energy on GHz ultrasound generation
in GaAs |
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Authors: | E Morozov Y Laamiri P Ruello D Mounier V E Gusev |
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Institution: | (1) Laboratoire de Physique de l'état Condensé UMR-CNRS 6087, Université du Maine, Av. Olivier Messiaen, 72085 Le Mans Cedex 9, France |
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Abstract: | Experimental results of the investigation of the
optoacoustic processes taetang place in GaAs semiconductor at ultrashort
time scales are reported. Femtosecond laser has been used both for the
generation (through the deformation potential mechanism by the interband
absorption of laser radiation) and detection of GHz ultrasound waves. First
experimental observation of an abrupt change in the phase of the
photoexcited GHz ultrasound, when with increase of the energy of optical
quanta direct generation of the electron-hole pairs in the side-valleys of
GaAs becomes allowed by the energy and momentum conservation laws, is
reported. We relate this observation, at least partially, to abrupt change
in the ultrafast dynamics of photogenerated electron-hole plasma, in
particular to deceleration of plasma diffusion when heavy carriers in the
high energy side valley are photogenerated instead of light carriers in the
lowest energy valley. |
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Keywords: | |
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