Double-gate-all-around tunnel field-effect transistor |
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Affiliation: | 1.School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China;2.Guangdong Xi'an Jiaotong University Academy, Shunde 528300, China |
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Abstract: | In this work, a double-gate-all-around tunneling field-effect transistor is proposed. The performance of the novel device is studied by numerical simulation. The results show that with a thinner body and an additional core gate, the novel device achieves a steeper subthreshold slope, less susceptibility to the short channel effect, higher on-state current, and larger on/off current ratio than the traditional gate-all-around tunneling field-effect transistor. The excellent performance makes the proposed structure more attractive to further dimension scaling. |
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Keywords: | gate-all-around (GAA) tunnel field effect transistor (TFET) drain induced barrier thinning (DIBT) |
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