Investigation of Zn_(1-x)Cd_xO films bandgap and Zn_(1-x)Cd_xO/ZnO heterojunctions band offset by x-ray photoelectron spectroscopy |
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Institution: | Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China |
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Abstract: | A series of Zn1-xCdxO thin films have been fabricated on sapphire by pulsed-laser deposition (PLD), successfully. To investigate the effect of Cd concentration on structural and optical properties of Zn1-xCdxO films, x-ray diffraction (XRD), ultraviolet-visible spectroscopy (UV-vis), and x-ray photoelectron spectroscopy (XPS) are employed to characterize the films in detail. The XRD pattern indicates that the Zn1-xCdxO thin films have high single-orientation of the c axis. The energy bandgap values of ZnCdO thin films decrease from 3.26 eV to 2.98 eV with the increasing Cd concentration (x) according to the (αhν)2-hν curve. Furthermore, the band offsets of Zn1-xCdxO/ZnO heterojunctions are determinated by XPS, indicating that a type-I alignment takes place at the interface and the value of band offset could be tuned by adjusting the Cd concentration. |
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Keywords: | ZnCdO film ZnCdO/ZnO heterojunction optical bandgap band offset |
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