Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress |
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Affiliation: | 1.Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;2.School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China;3.School of Earth and Space Sciences, University of Science and Technology of China, Hefei 230026, China |
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Abstract: | The progressive current degradation and breakdown behaviors of GaN-based light emitting diodes under high reversebias stress are studied by combining the electrical, optical, and surface morphology characterizations. The current features a typical "soft breakdown" behavior, which is linearly correlated to an increase of the accumulative number of electroluminescence spots. The time-to-failure for each failure site approximately obeys a Weibull distribution with slopes of about 0.67 and 4.09 at the infant and wear-out periods, respectively. After breakdown, visible craters can be observed at the device surface as a result of transient electrostatic discharge. By performing focused ion beam cuts coupled with scan electron microscope, we observed a local current shunt path in the surface layer, caused by the rapid microstructure deterioration due to significant current heating effect, consistent well with the optical beam induced resistance change observations. |
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Keywords: | GaN LEDs current degradation breakdown behavior reverse bias stress |
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