On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases |
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Institution: | Department of Materials Physics, School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China |
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Abstract: | In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current-voltage (I-V-T) characteristics of a Schottky barrier diode fabricated on free-standing GaN substrate for reverse-bias voltages up to -150 V. The model suggests that the reverse leakage current is dominated by the direct tunneling of electrons from Schottky contact metal into a continuum of states associated with conductive dislocations in GaN epilayer. A reverse leakage current ideality factor, which originates from the scattering effect at metal/GaN interface, is introduced into the model. Good agreement between the experimental data and the simulated I-V curves is obtained. |
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Keywords: | homoepitaxial GaN Schottky contact leakage current tunneling dislocations ideality factor |
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