| Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-Ⅱ In As/GaSb superlattice |
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| 引用本文： | 韩玺,向伟,郝宏玥,蒋洞微,孙姚耀,王国伟,徐应强,牛智川.Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-Ⅱ In As/GaSb superlattice[J].中国物理 B,2017,26(1):18505-018505. |
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| 作者姓名： | 韩玺 向伟 郝宏玥 蒋洞微 孙姚耀 王国伟 徐应强 牛智川 |
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| 作者单位： | 1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2. Synergetic Innovation Centre of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China |
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| 基金项目： | Project supported by the National Basic Research Program of China (Grant Nos. 2013CB932904 and 2011CB922201), the National Special Funds for the Development of Major Research Equipment and Instruments, China (Grant No. 2012YQ140005), and the National Natural Science Foundation of China (Grant Nos. 61274013, 61290303, and 61306013). |
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| 摘 要： | A very long wavelength infrared(VLWIR) focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K.A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of-20 mV, yielding a peak specific detectivity of 5.89×1010cm·Hz~(1/2)·W~(-1). The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.
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| 收稿时间： | 2016-07-18 |
Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-II InAs/GaSb superlattice |
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| Institution: | 1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2. Synergetic Innovation Centre of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China |
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| Abstract: | A very long wavelength infrared(VLWIR) focal plane array based on InAs/GaSb type-II super-lattices is demonstrated on a GaSb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K. A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of -20 mV, yielding a peak specific detectivity of 5.89×1010 cm·Hz1/2·W-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK. |
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| Keywords: | very long wavelength infrared type-II InAs/GaSb super-lattices (T2SLs) focal plane array |
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