Influences of different oxidants on characteristics of La_2O_3/Al_2O_3 nanolaminates deposited by atomic layer deposition |
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| Affiliation: | 1.School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;2.School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
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| Abstract: | A comparative study of two kinds of oxidants(H_2O and O_3) with the combination of two metal precursors(TMA and La(~iPrCp)_3) for atomic layer deposition(ALD) La_2O_3/Al_2O_3 nanolaminates is carried out. The effects of different oxidants on the physical properties and electrical characteristics of La_2O_3/Al_2O_3 nanolaminates are studied. Initial testing results indicate that La_2O_3/Al_2O_3 nanolaminates could avoid moisture absorption in the air after thermal annealing. However, moisture absorption occurs in H_2O-based La_2O_3/Al_2O_3 nanolaminates due to the residue hydroxyl/hydrogen groups during annealing. As a result, roughness enhancement, band offset variation, low dielectric constant and poor electrical characteristics are measured because the properties of H_2O-based La_2O_3/Al_2O_3 nanolaminates are deteriorated. Addition thermal annealing effects on the properties of O_3-based La_2O_3/Al_2O_3 nanolaminates indicate that O_3 is a more appropriate oxidant to deposit La_2O_3/Al_2O_3 nanolaminates for electron devices application. |
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| Keywords: | La2O3/Al2O3nanolaminates atomic layer deposition oxidants annealing |
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