Optimize the thermoelectric performance of CdO ceramics by doping Zn |
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Affiliation: | Hebei Key Laboratory of Optic-electronic Information and Materials, The College of Physics Science and Technology, Hebei University, Baoding 071002, China |
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Abstract: | The thermoelectric performance of CdO ceramics was enhanced by simultaneously optimizing the electrical and thermal transport properties via a small amount of Zn doping (≤ 3%). The introduction of Zn can obviously increase the electrical conductivity of CdO due to the simultaneous increase of carrier concentration and mobility, and eventually results in an improvement in power factor. Zn doping is also effective in suppressing the thermal conductivity of CdO because of stronger phonon scatterings from point defects, Zn-riched second phase, and grain boundaries. A best ZT of about 0.45 has been achieved in the Cd1-xZnxO systems at about 1000 K, which is comparable to the highest values reported for other n-type oxide TE materials. |
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Keywords: | thermoelectric properties CdO Zn doping power factor thermal conductivity |
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