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A review for compact model of graphene field-effect transistors |
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| Institution: | 1.Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;2.University of Chinese Academy of Sciences, Beijing 100049, China;3.Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM), Nanjing 210009, China |
| Abstract: | |
| Keywords: | two-dimensional material graphene field-effect transistor compact model |
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