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Direct characterization of boron segregation at random and twin grain boundaries |
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| Institution: | 1.Beijing Key Laboratory for Magneto–Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science & Technology Beijing, Beijing 100083, China;2.School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;3.Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, China |
| Abstract: | Boron distribution at grain boundaries in hot-deformed nickel is directly characterized by the time-of-flight secondary ion mass spectrometry. The segregations of boron are observed at both the random and twin grain boundaries. Two types of segregations at random grain boundaries are observed. The first type of segregation has a high intensity and small width. Its formation is attributed to the incorporating of dislocations into the moving grain boundaries. The second type of segregation arises from the cooling induced segregation at the dislocations associated with the grain boundaries. The segregation at twin boundary is similar to the second type of segregation at random grain boundaries. |
| Keywords: | boron segregation recrystallization twin boundary SIMS |
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