Magnesium incorporation efficiencies in Mg_xZn_(1-x)O films on ZnO substrates grown by metalorganic chemical vapor deposition |
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| Institution: | 1.College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou 350002, China;2.Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China |
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| Abstract: | We investigate the magnesium (Mg) incorporation efficiencies in MgxZn1-xO films on c-plane Zn-face ZnO substrates by using metalorganic chemical vapor deposition (MOCVD) technique. In order to deposit high quality MgxZn1-xO films, atomically smooth epi-ready surfaces of the hydrothermal grown ZnO substrates are achieved by thermal annealing in O2 atmosphere and characterized by atomic force microscope (AFM). The AFM, scanning electron microscope (SEM), and x-ray diffraction (XRD) studies demonstrate that the MgxZn1-xO films each have flat surface and hexagonal wurtzite structure without phase segregation at up to Mg content of 34.4%. The effects of the growth parameters including substrate temperature, reactor pressure and VI/II ratio on Mg content in the films are investigated by XRD analysis based on Vegard's law, and confirmed by photo-luminescence spectra and x-ray photoelectron spectroscopy as well. It is indicated that high substrate temperature, low reactor pressure, and high VI/II ratio are good for obtaining high Mg content. |
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| Keywords: | MgxZn1-xO MOCVD incorporation efficiency ZnO bulk crystal |
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