Optical waveguide in Nd:Bi_(12)SiO_(20) crystal produced by multi-energy C ion implantation |
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| Affiliation: | 1.School of Electronic and Information Engineering, Qingdao University, Qingdao 266071, China;2.School of Physics, Qingdao University, Qingdao 266071, China;3.Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China;4.Institute of Data Science and Technology, Shandong Normal University, Jinan 250014, China |
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| Abstract: | We report the fabrication of a planar waveguide in the Nd:Bi12SiO20 crystal by multi-energy C ions at room temperature. The waveguide is annealed at 200℃, 260℃, and 300℃ in succession each for 30 min in an open oven. The effective refractive index profiles at transverse electric (TE) polarization are stable after the annealing treatments. Damage distribution for multi-energy C ion implanted in Nd:Bi12SiO20 crystal is calculated by SRIM 2010. The Raman and fluorescence spectra of the Nd:Bi12SiO20 crystal are collected by an excitation beam at 633 nm and 473 nm, respectively. The results indicate the stabilization of the optical waveguide in Nd:Bi12SiO20 crystal. |
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| Keywords: | ion implantation Nd:Bi12SiO20 crystal |
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