Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure |
| |
| Institution: | 1.Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;2.University of Chinese Academy of Sciences, Beijing 100049, China |
| |
| Abstract: | The green light emitting diodes(LEDs)have lower quantum efficiency than LEDs with other emission wavelengths in the visible spectrum.In this research,a novel quantum well structure was designed to improve the electroluminescence(EL)of green InGaN-based LEDs.Compared with the conventional quantum well structure,the novel structure LED gained 2.14times light out power(LOP)at 20-mA current injection,narrower FWHM and lower blue-shift at different current injection conditions. |
| |
| Keywords: | InGaN novel quantum wells light-emitting diodes electroluminescence |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|
