| Abstract: | SnSe crystals belong to IV–VI layered binary semiconducting compound category. These layered compounds have generated a great deal of interest due to their interesting electronic properties. These electronic materials are useful because of their applications in holographic‐recording systems, optoelectronics and memory switching. Earlier, several investigators have studied and reported the influence of temperature and pressure over the phase transitions in SnS and SnSe semiconductors. They also utilized Mossbauer Spectroscopy and Hydrostatic Pressure techniques to examine the bonding of the Sn atoms in SnS and SnSe. It is therefore thought worthwhile to study the effect of pressure on the thermoelectric power and the electrical resistance of SnSe crystals synthesized by a modified direct vapour transport technique. The electrical resistance has been found to be pressure dependent. The transition in electrical resistance behaviour, observed at 65 Kbar, has been explained on the basis of transition from a predominantly two‐dimensional material to a more three‐dimensional one. Similar to the resistance behaviour, the thermoelectric power is also found to be pressure dependent. The increase in thermoelectric power with pressure at the transition pressure of 65 Kbar has been explained. The implications are discussed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
