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The strain relaxation in a lattice-mismatched heterostructure |
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| Authors: | Y. S. Lim J. Y. Lee T. W. Kim |
| Affiliation: | a Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 337-1 Gusung-dong, Yusung-ku, Daejon 305-701, South Korea b Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, South Korea |
| Abstract: | Strain relaxation phenomena of the heteroepitaxial lattice-mismatched semiconductors have been investigated. The relationship between the residual in-plane strain and the width of the misfit cell was obtained geometrically. The residual in-plane strain was calculated for various film thicknesses by using the energy minimization theory on the misfit cell in the InxGa1−xAs/GaAs(1 0 0) heterostructure system. A generalized strain relaxation model is presented on the basis of the energy minimization theory. |
| Keywords: | Strain relaxation Misfit cell InGaAs Relaxation thickness Heterostructure |
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