A comparison of electromigration failure of metal lines with fracture mechanics |
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| Authors: | Hiroyuki Abé Mikio Muraoka Kazuhiko Sasagawa Masumi Saka |
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| Institution: | Hiroyuki Abé.Mikio Muraoka.Kazuhiko Sasagawa.Masumi Saka Tohoku University,Sendai 980-8579,Japan Department of Mechanical Engineering,Akita University,Tegatagakuen-machi 1-1,Akita 010-8502,Japan Department of Intelligent Machines and System Engineering,Hirosaki University,Bunkyo-cho 3,Hirosaki 036-8561,Japan Department of Nanomechanics,Tohoku University,Aoba 6-6-01,Aramaki,Aoba-ku,Sendai 980-8579,Japan |
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| Abstract: | Atoms constructing an interconnecting metal linein a semiconductor device are transported by electron flowin high density.This phenomenon is called electromigration,which may cause the line failure.In order to characterize theelectromigration failure,a comparison study is carried outwith some typical phenomena treated by fracture mechanicsfor thin and large structures.An example of thin structures,which have been treated by fracture mechanics,is silica optical fibers for communication systems.The damage growth ina metal line by electromigration is characterized in comparison with the crack growth in a silica optical fiber subjectedto static fatigue.Also a brief comparison is made betweenthe electromigration failure and some fracture phenomena inlarge structures. |
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| Keywords: | Electromigration failure Interconnecting line Comparison Fracture mechanics |
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