首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Structural and some electrophysical properties of the solid solutions Si1 ? x Sn x (0 ≤ x ≤ 0.04)
Authors:A S Saidov  Sh N Usmonov  M U Kalanov  A N Kurmantayev  A N Bahtybayev
Institution:1. Starodubtsev Physical-Technical Institute, Uzbekistan Academy of Sciences, ul. G. Mavlyanova 2, Tashkent, 700084, Uzbekistan
2. Institute of Nuclear Physics, Uzbekistan Academy of Sciences, Ulugbek, Tashkent, 100214, Uzbekistan
3. Hoca Ahmet Yesevi International Kazakh-Turkish University, pl. Esimkhana 2, Turkestan, 487010, Kazakhstan
Abstract:Films of the solid solutions Si1 ? x Sn x (0 ≤ x ≤ 0.04) on Si substrates have been grown by liquid phase epitaxy. The structural features of the films have been investigated using X-ray diffraction. The temperature behavior of current-voltage characteristics and the spectral dependence of the photocurrent for the heterostructures p-Si-n-Si1 ? x Sn x (0 ≤ x ≤ 0.04) have been analyzed. The grown epitaxial films of the solid solutions Si1 ? x Sn x (0 ≤ x ≤ 0.04) have a perfect single-crystal structure with a (111) orientation and a subgrain size of 60 nm. In the epitaxial films at the Si-SiO2 interfaces between silicon subgrains and SiO2 nanocrystals, where there are many sites with a high potential, the Sn ions with a high probability substitute for the Si ions and encourage the formation of Sn nanocrystals with different orientations and, as follows from the analysis of the X-ray diffraction patterns, with different sizes: 8 nm (for the (101) orientation) and 12 nm (for the (200) orientation). The current-voltage characteristics of the heterostructures p-Si-n-Si1 ? x Sn x (0 ≤ x ≤ 0.04) are described by the exponential law J = J 0exp(qV/ckT) at low voltages (V < 0.2 V) and the square law J = (9qμ p τ p μ n N d /8d 3)V 2 at high voltages (V > 1 V). These results have been explained by the drift mechanism of charge carrier transport in the electrical resistance relaxation mode.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号