Gas-phase basicity: Parameter determining the efficiency of laser desorption/ionization from silicon surfaces |
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| Authors: | A A Grechnikov A S Borodkov S S Alimpiev S M Nikiforov Ya O Simanovsky |
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| Institution: | 1. Vernadsky Institute of Geochemistry and Analytical Chemistry, Russian Academy of Sciences, ul. Kosygina 19, Moscow, 119991, Russia
2. Prokhorov Institute of General Physics, ul. Vavilova 38, Moscow, 119991, Russia
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| Abstract: | The efficiency of laser desorption/ionization of twenty compounds from the surface of amorphous silicon is studied as a function of proton affinity (PA) and gas-phase basicity (GB). The values of GB and PA are obtained from quantum-chemical calculations using the density functional theory in the B3LYP model with the 6–311++G(3df,3pd) basis set. The values of GB lie in the range from 845 to 977 kJ/mol. The efficiency of laser desorption/ionization exponentially depends on the GB and PA values and for the studied compounds varies from 7 × 10?6 to 1.4 × 10?2. |
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