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Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate |
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| Authors: | Yang Sheng Chang Sheng Xia Zhan Ming Simon Li Li Wen Cheng |
| Institution: | 1. State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, 200433, China 2. Crosslight Software Inc. China Branch, Suite 906, Building JieDi, 2790 Zhongshan Bei Road, Shanghai, 200063, China 3. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China |
| Abstract: | Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with patterned sapphire substrate (PSS) are simulated by the APSYS software. Approach of combining finite-difference time-domain (FDTD) method and raytracing technique is applied to perform light extraction. The simulation results show that PSS dramatically increases extraction efficiency of light power, in agreement with experiment. It is found that extraction efficiency can be maximized by changing the shape of PSS. This work presents a new approach to combine electrical simulation with FDTD and raytracing in 3D TCAD simulation of GaN-LED. |
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