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Optimization for mid-wavelength InSb infrared focal plane arrays under front-side illumination |
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| Authors: | N Guo W D Hu X S Chen W Lei Y Q Lv X L Zhang J J Si W Lu |
| Institution: | 1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China 2. School of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley, WA, 6009, Australia 3. Luoyang Optoelectronic Institute, Luoyang, Henan, 471009, China |
| Abstract: | The quantum efficiency for mid-wavelength InSb infrared focal plane arrays has been numerically studied by two dimensional simulators. Effects of thickness of p-type layer on the quantum efficiency under front-side illumination have been obtained. The calculated results can be used to extract the optimal thickness of the p-type layer for different absorption and diffusion lengths. It is indicated that the optimal thickness of the p-type layer strongly depends on the absorption coefficient and the minority carrier lifetimes. The empirical formulas are also obtained to describe the correlation between the optimal thickness of the p-type layer, and the absorption and diffusion lengths. |
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