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Simulation of a ridge-type semiconductor laser for separate confinement of horizontal transverse modes and carriers
Authors:Hiroki Kato  Hazuki Yoshida  Takahiro Numai
Institution:1. Graduate School of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga, 525-8577, Japan
Abstract:A ridge-type semiconductor laser with selectively proton-implanted cladding layers for separate confinement of horizontal transverse modes and carriers is proposed, and lasing characteristics are simulated. Light is confined by the proton-implanted n-cladding layer; carriers are confined by the proton-implanted p-cladding layer. It is found that light output operating in the fundamental transverse mode is enhanced and threshold current is decreased.
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