Controlled fabrication of Si nanostructures by high vacuum electron beam annealing |
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| Institution: | 1. National Isotope Centre, GNS Science, Lower Hutt, 30 Gracefield Road, Wellington, New Zealand;2. The MacDiarmid Institute of Advanced Materials and Nanotechnology, Victoria University of Wellington, New Zealand;1. School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China;2. School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China;1. Department of Physics, Panjab University, Chandigarh 160014, India;2. Departamento de Física, Facultad de Ciencias, Universidad Católica del Norte, Avenida Angamos 0610, Casilla 1280, Antofagasta, Chile;3. Department of Applied Sciences, Kamla Nehru Institute of Technology, Sultanpur 228118, Uttar Pradesh, India;1. Institute of Fundamental and Frontier Sciences and School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Sichuan Institute of Piezoelectric and Acousto-optic Technology, Chongqing 400060, China;3. Ingram School of Engineering and MSEC, Texas State University, San Marcos, Texas 78666 USA;1. Department of Physics, Panjab University, Chandigarh 160014, India;2. Departamento de Física, Facultad de Ciencias, Universidad Católica del Norte, Avenida Angamos 0610, Casilla 1280, Antofagasta, Chile;3. Department of Applied Sciences, Kamla Nehru Institute of Technology, Sultanpur 228118, Uttar Pradesh, India;1. Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi, India;2. Indian Institute of Technology, Delhi, India;1. Department of Chemistry, East Tehran Branch, Islamic Azad University, Tehran, Iran;2. Department of Chemistry, North Tehran Branch, Islamic Azad University, Tehran, Iran;3. Department of Chemical Engineering, North Tehran Branch, Islamic Azad University, Tehran, Iran;4. Department of Chemistry, Faculty of Science, Hamedan Branch, Islamic Azad University, Hamedan, Iran |
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| Abstract: | Silicon nanostructures, called Si nanowhiskers, have been successfully synthesized on Si(1 0 0) substrate by high vacuum electron beam annealing (EBA). Detailed analysis of the Si nanowhisker morphology depending on annealing temperature, duration and the temperature gradients applied in the annealing cycle is presented. A correlation was found between the variation in annealing temperature and the nanowhisker height and density. Annealing at 935 °C for 0 s, the density of nanowhiskers is about 0.2 μm?2 with average height of 2.4 nm grow on a surface area of 5×5 μm, whereas more than 500 nanowhiskers (density up to 28 μm?2) with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 °C for 0 s. At a cooling rate of ?50 °C s?1 during the annealing cycle, 10–12 nanowhiskers grew on a surface area of 5×5 μm, whereas close to 500 nanowhiskers grew on the same surface area for samples annealed at the cooling rate of ?5 °C s?1. An exponential dependence between the density of Si nanowhiskers and the cooling rate has been found. At 950 °C, the average height of Si nanowhiskers increased from 4.0 to 6.3 nm with an increase of annealing duration from 10 to 180 s. A linear dependence exists between the average height of Si nanowhiskers and annealing duration. Selected results are presented showing the possibility of controlling the density and the height of Si nanowhiskers for improved field emission properties by applying different annealing temperatures, durations and cooling rates. |
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