Ohmic contact and space-charge-limited current in molybdenum oxide modified devices |
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| Institution: | 1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, PR China;2. Department of Physics, School of Science, Beijing Jiaotong University, Beijing 100044, PR China;3. Department of Mathematics and Physics, Beijing Technology and Business University, Beijing 100037, PR China;1. Institute for Solar Energy Systems, Sun Yat-Sen University, Guangzhou 510275, P.R. China;2. ShunDe SYSU Institute for Solar Energy, Foshan 528300, P.R. China;1. Department of Chemistry, College of Science, Nanjing Agricultural University, Nanjing 210095, PR China;2. State Key Laboratory of Coordination Chemistry, Coordination Chemistry Institute, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, PR China;3. College of Agriculture, Nanjing Agricultural University, Nanjing 210095, PR China;1. EGA Institute for Women''s Health and Institute for Global Health, University College London, London, UK;2. Botswana-U Penn Partnership, PO Box AC157 ACH, Gaborone, Botswana;3. Desmond Tutu HIV Centre, University of Cape Town, Cape Town, South Africa;4. Wits Reproductive Health and HIV Institute, University of the Witwatersrand, Johannesburg, South Africa;1. Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, PR China;2. Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, PR China;1. School of Chemical Engineering and Technology, Tianjin University, Tianjin 300354, China;2. Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China;3. South China University of Technology, Guangzhou 510640, China |
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| Abstract: | The effect of indium-tin oxide (ITO) surface treatment on hole injection of devices with molybdenum oxide (MoO3) as a buffer layer on ITO was studied. The Ohmic contact is formed at the metal/organic interface due to high work function of MoO3. Hence, the current is due to space charge limited when ITO is positively biased. The hole mobility of N, N′-bis-(1-napthyl)-N, N′-diphenyl-1, 1′biphenyl-4, 4′-diamine (NPB) at various thicknesses (100–400 nm) has been estimated by using space-charge-limited current measurements. The hole mobility of NPB, 1.09×10−5 cm2/V s at 100 nm is smaller than the value of 1.52×10−4 cm2/V s at 400 nm at 0.8 MV/cm, which is caused by the interfacial trap states restricted by the surface interaction. The mobility is hardly changed with NPB thickness for the effect of interfacial trap states on mobility which can be negligible when the thickness is more than 300 nm. |
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