An impact mechanism in diverting energy from absorbing inclusions at laser destruction of transparent dielectrics

A new mechanism of destruction of transparent dielectrics with small highly-absorbing inclusions by using intensive laser emission has been suggested. It has been shown that for experimentally found values of threshold radiation intensity I_th ≈ 1 GW/cm² and impurity concentration n ? 10⁷ cm^-3 radiation absorption outside the front of the impurity-initiated shock wave, when allowing for the collective action of waves, results in great heating of the dielectric surface layer which causes its destruction. The found critical value of impurity concentration is several orders less than the value estimated over a model of heating of an inclusion-surrounding dielectric at the expense of heat conductivity.