Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates |
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| Authors: | E. Yu. Lundina Yu. M. Shernyakov M. V. Maksimov I. N. Kayander A. F. Tsatsul’nikov N. N. Ledentsov A. E. Zhukov N. A. Maleev S. S. Mikhrin V. M. Ustinov Zh. I. Alferov D. Bimberg |
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| Affiliation: | 1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia
2. Institut für Fesk?rphysik, Technische Universit?t Berlin, D-10623, Berlin, Germany
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| Abstract: | Accelerated degradation testing of long-wavelength (>1.25 µm) quantum-dot lasers made on GaAs substrates is carried out at a fixed current of 1.7 A, initial optical output of about 0.3 W, and a heat sink temperature of 60°C. No signs of degradation are revealed after testing for 450 h. The test bed is not sealed, inert gas purging is not performed, and the laser faces are not passivated. |
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