A possible role of amorphous regions at grain-boundary vertex points as linear defects on flux pinning in MgB2 films with columnar grain structure

We measured the transport properties of MgB₂ films having columnar grain structure with their axis normal to the substrate. When an external magnetic field was applied parallel to the grain axis, an enhanced critical current density has been observed, and this result has been ascribed to flux pinning induced by grain boundaries. The shape of the angular dependence of critical current density and its magnetic field dependence showed a quite similar resemblance to those of YBa₂Cu₃O_x films containing columnar defects, implying a possible existence of linear defects in MgB₂ films of columnar structure. We propose that the amorphous regions at the vertex points of three or more grain boundaries observed in microstructural studies correspond to the linear defects and these linear defects anchor the end points of the flux line dislocations of Frank-Read sources, by which the shear in the flux line lattice is actuated. This assumed mechanism is found to reasonably explain the magnetic field dependence of the flux pinning force density of MgB₂ films with columnar grain structure.