| CMP中抛光垫的性质研究 |
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| 引用本文： | 周国安,种宝春,柳滨,王学军.CMP中抛光垫的性质研究[J].微纳电子技术,2008,45(8). |
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| 作者姓名： | 周国安 种宝春 柳滨 王学军 |
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| 作者单位： | 中国电子科技集团公司,第四十五研究所,北京,101601 |
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| 摘 要： | 以IC1000/Suba IV抛光垫为例,综述了影响抛光垫性能的各种因素,以文献相关数据为依据,着重分析了抛光温度和修整力对抛光垫性能的影响。从分析结果可以得出:IC1000/Suba IV比单层结构IC1000具有更好的抛光效果;新旧抛光垫性能在0~40°C基本相当;新、旧和没有黏合剂抛光垫的正常工作温度为-2.02~103.64°C,且玻璃过渡温度随着抛光垫厚度的减小而增加;抛光垫在0~50°C具有最小的外形变化。定性得出修整力与抛光精度成反比关系,明确了较小修整深度具备较好的平坦化效果。
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| 关 键 词： | 化学机械抛光 抛光垫 玻璃过渡温度 机械动力分析 热机械分析 修整器 |
Study on the Property of Polishing Pad in CMP |
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| Zhou Guoan,Chong Baochun,Liu Bin,Wang Xuejun.Study on the Property of Polishing Pad in CMP[J].Micronanoelectronic Technology,2008,45(8). |
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| Authors: | Zhou Guoan Chong Baochun Liu Bin Wang Xuejun |
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| Institution: | Zhou Guoan,Chong Baochun,Liu Bin,Wang Xuejun(The 45th Research Institute,CETC,Beijing 101601,China) |
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| Abstract: | As for IC1000/Suba IV polishing pad,the various factors impacting the performance of the polishing pad are summarized.Based on the relevant data of literatures,the influence of the temperature and conditioning force on the performance of the pad is analyzed.The analysis results show that IC1000/Suba IV has better polishing effect than single structure IC1000.The performances of the new and the old polishing pads are comparable at 0-40 °C.The normal working temperatures of the new/old polishing pads and the polishing pad without adhesive are from -2.02 to 103.64 °C. The glass transition temperature increases with the decrease in the polishing pad thickness.The pad has the smallest shape change at 0-50 °C.The inverse proportional relationship between the conditioning force and polishing precision is qualitative analyzed,and the smaller conditioning depth has the better flat effect. |
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| Keywords: | chemical-mechanical polishing(CMP) polishing pad glass transition temperature dynamic mechanical analysis thermomechanical analysis conditioner |
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