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Magnetic characterization of ZnO doped with vanadium
Authors:E. Schlenker   A. Bakin   B. Postels   A.C. Mofor   M. Kreye   C. Ronning   S. Sievers   M. Albrecht   U. Siegner   R. Kling  A. Waag
Affiliation:aInstitute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig, Germany;bII. Institute of Physics, Georg-August-University Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany;cPhysikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig, Germany;dDepartment of Semiconductor Physics, University of Ulm, Albert-Einstein-Allee 45, 89081 Ulm, Germany
Abstract:The magnetic properties of vanadium doped ZnO nanorods formed by different growth methods were examined. The samples under investigation were either grown by metallorganic vapour-phase epitaxy (MOVPE) with in situ incorporation of the V atoms or by aqueous chemical growth (ACG) in combination with an ion-implantation process. The V concentration for all samples was less than 2 at.%.Field-cooled SQUID measurements only reveal a weak ferromagnetic signal still in a very sensitive measuring range. However, the MFM micrographs obtained at room temperature show a clear magnetic contrast and complex structures, the images are in good agreement with the phase images expected for vertically aligned magnetic dipoles. This is a strong indication for a ferromagnetic behaviour at room temperature.
Keywords:ZnO   V doped ZnO   Nanorods   Ferromagnetism at room temperature
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