Injection electroluminescence from CdTe p-n junctions prepared by LPE |
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| Authors: | M Kitagawa J Saraie T Tanaka |
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| Institution: | (1) Department of Electronics, Faculty of Engineering, Kyoto University, 606 Kyoto, Japan;(2) Present address: Takuma College of Electro-Communications, Takuma-cho, Mitoyo-gun, 769-11 Kagawa, Japan |
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| Abstract: | CdTep-n junction diodes were prepared by LPE using CdCl2 as a solvent. Excess cadmium was added to the CdCl2-CdTe solution. Capacitance-voltage characteristics show that the diode structure is ofp-i-n type. Injection electroluminescence spectra reveal that radiative transitions occur mainly in thep-type region; relevant recombination centers are discussed in connection with those in a previous paper on the photoluminescence of CdTe:P crystals. Temperature dependences of the electroluminescence spectra were explained taking into account a change in sites where electrons radiatively recombine. |
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| Keywords: | 78 60 Fi 73 40 Lq 81 10 Dn |
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