Raman spectroscopy for impurity characterization in III–V semiconductors

Raman spectroscopy is discussed as a tool for the quantitative assessment of impurities and defects in III-V semiconductors. After a brief discussion of the effect of defects on Raman scattering by intrinsic phonon modes emphasis is laid on the characterization of individual impurities either via scattering by impurity-induced local vibrational modes or via scattering by internal electronic excitations.