Semiconductor Nanoparticles |
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Authors: | M. Bangal S. Ashtaputre S. Marathe A. Ethiraj N. Hebalkar S. W. Gosavi J. Urban S. K. Kulkarni |
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Affiliation: | (1) Department of Physics, University of Pune, Pune, 411007, India;(2) Fritz Haber Institute der Max Planck Gesellschaft, D-97074 Berlin, Germany |
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Abstract: | Semiconductor nanoparticles exhibit size dependent properties, when their size is comparable to the size of Bohr diameter for exciton. This can be exploited to increase fluorescence efficiency or increase the internal magnetic field strength in doped semiconductors. Nanoparticles are usually unstable and can aggregate. It is therefore necessary to protect them. Surface passivation using capping molecules or by making core–shell particles are some useful ways. Here synthesis and results on doped and un-doped nanoparticles of ZnS, CdS and ZnO will be discussed. We shall present results on core–shell particles using some of these nanoparticles and also discuss briefly the effect of Mn doping on hyperfine interactions in case of CdS nanoparticles. |
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Keywords: | core– shell doping ESR semiconductor nanoparticles TEM |
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