InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd:YVO4 laser at 1342 nm |
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| Authors: | Su K W Lai H C Li A Chen Y F Huang K F |
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| Institution: | Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan. |
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| Abstract: | We report that InAs/GaAs quantum dots were developed to be saturable absorbers as well as output couplers in diode-pumped passively mode-locked Nd:YVO4 lasers at 1342 nm. With an incident pump power of 12.6 W, an average output power of 0.85 W with a mode-locked pulse width of 26 ps at a repetition rate of 152 MHz was obtained. |
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