Abstract: | Defects in nitrogen‐doped diamond films, produced by hot filament chemical vapour deposition have been studied by Electron Spin Resonance (ESR), Raman spectroscopy and Scanning Electron Microscopy (SEM). The peak‐to‐peak ESR line width (ΔH pp) varies in the range 0.36‐0.52 mT and depends on the nitrogen concentration in the process gas. In the case of nitrogen‐doped diamond films ESR spectrum shows a hyperfine structure typical of NS0 paramagnetic centre. The shape of the central ESR line shows that it is a superposition of two components: a narrower Lorentzian and a broader Gaussian one, characterized by different saturation behaviour. With increasing nitrogen concentration in process gas the ratio of integral intensities A G/A L (Gausian to Lorentzian) of ESR spectrum also increases. The Raman spectra show that with increasing doping level the diamond Raman line at 1332.5 cm‐1 broadens, the broad band at about 1530 cm‐1 becomes more pronounced what indicate on degradation of diamond crystallinity and it is in agreement with SEM observation. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |