Determination of lattice parameters and thermal expansion of CuGe2P3 + 0.2 Ge3P4 at elevated temperatures

CuGe₂P₃ is a p‐type semiconductor with zincblende structure. Ge₃P₄ is soluble up to 35 mole% in CuGe₂P₃. Lattice parameters of CuGe₂P₃ + 0.2 Ge₃P₄ have been determined at elevated temperatures from room temperature to 873 K using the x‐ray diffraction profiles (111), (200), (220), (311), (222), (400), (331), (420), (422) and (511) obtained from high temperature diffractometer. It is found that the lattice parameter increases linearly from 0.53856 nm at RT to 0.54025 nm at 873 K. The data on lattice parameter is used and coefficient of lattice thermal expansion of CuGe₂P₃ +0.2 Ge₃P₄ was determined at different temperatures. It is found that the coefficient of thermal expansion of CuGe₂P₃ +0.2 Ge₃P₄ is 5.48 x 10^‐6 K^‐1 and is independent of temperature. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)