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Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-k LaLuO3 Gate Dielectric |
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| Authors: | YU Wen-Jie ZHANG Bo LIU Chang XUE Zhong-Ying CHEN Ming ZHAO Qing-Tai |
| Affiliation: | 1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2peter Griinberg Institute 9 (PGI 9), Forschungszentrum Julich and JARA Fundamentals of Future Intormation Technology, 52425 Jiilich, Germany) |
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