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Nanoelectronic Devices Based on Carbon Nanotubes
Authors:Zhbanov  A I  Sinitsyn  N I  Torgashov  G V
Institution:1. N. G. Chernyshevsky State University of Saratov, Saratov, Russia
2. Saratov Branch of Institute of Radioelectronics of the Russian Academy of Sciences, Saratov, Russia
Abstract:We review the state-of-the-art in the carbon nanotube (CNT) electronics. The emphasis is made on actually created devices. The history of discovery of fullerenes is outlined and their properties are considered. Experimental discovery of nanotubes and nanotube synthesis technologies are reviewed. The CNT conductivity dependence on the geometrical structure of nanotubes is discussed. Various nanoelectronic CNT devices, such as nanowires, heterojunctions, diodes, and field-effect transistors are presented. Quantum properties of CNTs at low temperatures are discussed. CNT-based mechanical devices, memory elements, and switches are considered. Field emission properties of CNTs are analyzed. The data on the developed CNT-based light-emitting elements and the manufactured pre-production models of CNT flat-panel displays are given.
Keywords:
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