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Diode-pumped erbium-ytterbium-glass laser passively Q-switched with a PbS semiconductor quantum-dot doped glass |
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| Authors: | J.F. Philipps T. Töpfer H. Ebendorff-Heidepriem D. Ehrt R. Sauerbrey N.F. Borrelli |
| Affiliation: | Institut für Optik und Quantenelektronik, Friedrich-Schiller-Universit?t Jena, Max-Wien-Platz 1, D-07743 Jena, Germany, DE Otto-Schott-Institut für Glaschemie, Friedrich-Schiller-Universit?t Jena, Fraunhoferstrasse 6, D-07743 Jena, Germany, DE Technology Group, Corning Inc., Research and Development Center, Sullivan Park, Corning New York 14831, USA, US |
| Abstract: | Q-switched and cw operation of different diode-pumped erbium-ytterbium doped glasses at 1.5 μm has been studied in a compact microlaser setup. For Q-switching we used a novel PbS semiconductor quantum-dot doped glass which offers low saturation intensity compared with typical absorbers used and a fast time response. The cw laser delivered output powers of 35 mW with slope efficiencies of 16%. In Q-switched operation pulse energies of 1 μJ at repetition rates of 1–2 kHz and pulse durations of about 30–50 ns, depending on absorber thickness were obtained. Received: 5 June 2000 / Revised version: 29 June 2000 / Published online: 13 September 2000 |
| Keywords: | PACS: 42.55.Xi 42.60.Gd 42.70.Hj |
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